New generation of SAW devices on advanced engineered substrates combining piezoelectric single crystals and Silicon

被引:28
作者
Ballandras, S. [1 ]
Courjon, E. [1 ]
Bernard, F. [1 ]
Laroche, T. [1 ]
Clairet, A. [1 ]
Radu, I [2 ]
Huyet, I [2 ]
Drouin, A. [2 ]
Butaud, E. [2 ]
机构
[1] Frecnsys SAS, Besancon, France
[2] SOITEC, Bernin, France
来源
PROCEEDINGS OF THE 2019 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND EUROPEAN FREQUENCY AND TIME FORUM (EFTF-IFCS 2019) | 2019年
关键词
Piezo-On-Insulator; -; POI; Wafer bonding; SAW; Temperature stability; Small Insertion Losses; filters; sensors; LAYERS; LITAO3; WAFER;
D O I
10.1109/fcs.2019.8855991
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper describes a new generation of composite substrates dedicated to advanced surface acoustic wave (SAW) devices. For very long years, SAW applications (filtering, resonators, sensing) have been developed on single crystal materials. A competition was still existing with layered substrates using poly-crystals which were never able to overcome standard solutions. The Piezoelectric-On-Insulator (POI) structure which combines highly coupled single crystals with Silicon offers today unique properties to revitalize SAW industry and to give it a major push towards the modern telecommunication competition. This paper resumes the main steps that yields the technique to this edge and puts in perspective the potential of this breakthrough technology.
引用
收藏
页数:6
相关论文
共 28 条
[1]  
Aspar B., 2002, Silicon wafer bonding technology for VLSI and MEMS applications, P35
[2]   Simulations of surface acoustic wave devices built on stratified media using a mixed finite element/boundary integral formulation [J].
Ballandras, S ;
Reinhardt, A ;
Laude, V ;
Soufyane, A ;
Camou, S ;
Daniau, W ;
Pastureaud, T ;
Steichen, W ;
Lardat, R ;
Solal, M ;
Ventura, P .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) :7731-7741
[3]  
Ballandras S., 2019, P JOINT IFCS EFTF S
[4]  
Bruel M., 1993, Patent No. [FR2681472 (B1), 26814721]
[5]  
Eda K., 1995, United State Patent, Patent No. 005446330
[6]  
Eda K, 1993, P 2 INT S SEM WAF BO, P373
[7]  
Gorisse M, 2018, PROC IEEE INT ULTRAS, P1, DOI DOI 10.3390/MI11010007
[8]  
Hayashi J, 2017, IEEE INT ULTRA SYM
[9]  
Hori Yuji, 2009, 2009 IEEE International Ultrasonics Symposium, P2631, DOI 10.1109/ULTSYM.2009.5441626
[10]  
Inoue S., 2018, US patent application, Patent No. [US2018159495 (A1), 20181594951]