Air-Stable Technique for Fabricating n-Type Carbon Nanotube FETs

被引：0
作者：
Wei, Hai [1 ]
Chen, Hong-Yu [1 ]
Liyanage, Luckshitha [1 ]
Wong, H. -S. Philip [1 ]
Mitra, Subhasish [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年
关键词：
FIELD-EFFECT TRANSISTORS; P-TYPE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：4
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