Ferromagnetism of manganese-silicide nanopariticles in silicon

被引:17
作者
Yabuuchi, Shin [1 ,2 ]
Ono, Yukinori [1 ]
Nagase, Masao [1 ]
Kageshima, Hiroyuki [1 ]
Fujiwara, Akira [1 ]
Ohta, Eiji [2 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan
[2] Keio Univ, Dept Appl Phys & Physicoinformat, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
关键词
silicon; manganese; silicide; nanoparticle; spintronics; magnetism; implantation;
D O I
10.1143/JJAP.47.4487
中图分类号
O59 [应用物理学];
学科分类号
摘要
The annealing-temperature (700-900 degrees C) dependence of the ferromagnetism of manganese-implanted silicon is investigated. In the annealed samples, the manganese-containing nanoparticles, whose mean size was found to get bigger with temperature, are formed and these samples show ferromagnetism. We obtain evidence that the samples annealed at 800-850 degrees C produce two kinds of ferromagnets and that one of them offers a coercivity as high as 2500 Oe, suggesting the possibility of Si-based nanostructures with stable ferromagnetism. The origin of these ferromagnetisms is also discussed in conjunction with the size distribution of the nanoparticles.
引用
收藏
页码:4487 / 4490
页数:4
相关论文
共 18 条
[1]   Observation of crystallite formation in ferromagnetic Mn-implanted Si [J].
Awo-Affouda, C. ;
Bolduc, M. ;
Huang, M. B. ;
Ramos, F. ;
Dunn, K. A. ;
Thiel, B. ;
Agnello, G. ;
LaBella, V. P. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04) :1644-1647
[2]   Enhanced room temperature ferromagnetism in Co- and Mn-ion-implanted silicon [J].
Bandaru, P. R. ;
Park, J. ;
Lee, J. S. ;
Tang, Y. J. ;
Chen, L. -H. ;
Jin, S. ;
Song, S. A. ;
O'Brien, J. R. .
APPLIED PHYSICS LETTERS, 2006, 89 (11)
[3]   Annealing temperature effects on the structure of ferromagnetic Mn-implanted Si [J].
Bolduc, M. ;
Awo-Affouda, C. ;
Ramos, F. ;
LaBella, V. P. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04) :1648-1651
[4]   Above room temperature ferromagnetism in Mn-ion implanted Si [J].
Bolduc, M ;
Awo-Affouda, C ;
Stollenwerk, A ;
Huang, MB ;
Ramos, FG ;
Agnello, G ;
LaBella, VP .
PHYSICAL REVIEW B, 2005, 71 (03)
[5]   Quasiferromagnetism in semiconductors [J].
Dubroca, T ;
Hack, J ;
Hummel, RE ;
Angerhofer, A .
APPLIED PHYSICS LETTERS, 2006, 88 (18)
[6]   Magnetic properties of single crystalline Mn4Si7 [J].
Gottlieb, U ;
Sulpice, A ;
Lambert-Andron, B ;
Laborde, O .
JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 361 (1-2) :13-18
[7]   Consideration of the validity of the 14 valence electron rule for semiconducting chimney-ladder phase compounds [J].
Imai, Y ;
Watanabe, A .
INTERMETALLICS, 2005, 13 (02) :233-241
[8]  
MASSALSKI TB, 1992, BINARY ALLOY PHASE D, P2602
[9]   Surface effects on the magnetic properties of ultrafine cobalt particles [J].
Respaud, M ;
Broto, JM ;
Rakoto, H ;
Fert, AR ;
Thomas, L ;
Barbara, B ;
Verelst, M ;
Snoeck, E ;
Lecante, P ;
Mosset, A ;
Osuna, J ;
Ould-Ely, T ;
Amiens, C ;
Chaudret, B .
PHYSICAL REVIEW B, 1998, 57 (05) :2925-2935
[10]  
Shimura F., 1989, Semiconductor Silicon Crystal Technology, Vfirst