Density of impurity states of shallow donors in a quantum well under intense laser field

被引：88

作者：

Niculescu, E. C. ^{[1
]}

Burileanu, L. M. ^{[1
]}

Radu, A. ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Dept Phys, RO-77206 Bucharest, Romania

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 44卷 / 02期

关键词：

laser radiation effects; quantum well; shallow donors; density of impurity states;

D O I：

10.1016/j.spmi.2008.03.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The density of donor impurity states in a square GaAs-AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：173 / 182

页数：10

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