Characteristics of cross-gain (XG) wavelength conversion in quantum dot semiconductor optical amplifiers

被引：51

作者：

Qasaimeh, O ^{[1
]}

机构：

[1] Jordan Univ Sci & Technol, Dept Elect Engn, Irbid 22110, Jordan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 02期

关键词：

cross gain (XG); quantum dot (QD) amplifiers; wavelength conversion;

D O I：

10.1109/LPT.2003.821047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed theoretical analysis of cross-gain,(XG) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented. The model takes into account the effect of the excited states, the wetting layer (WL) and the nonlinear, optical gain of the dots. An analytical model of the small-signal XG conversion efficiency is also derived. The XG efficiency shows strong dependence on the escape and relaxation lifetimes between the ground and excited states. The model/analysis provides insight on the escape/relaxation lifetime of QD lasers which is very important for characterizing and understanding the performance characteristics of QD devices.

引用

页码：542 / 544

页数：3

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