Li(Zn,Mn)As as a new generation ferromagnet based on a I-II-V semiconductor

被引：174

作者：

Deng, Z. ^{[1
,2
]}

Jin, C. Q. ^{[1
,2
]}

Liu, Q. Q. ^{[1
,2
]}

Wang, X. C. ^{[1
,2
]}

Zhu, J. L. ^{[1
,2
]}

Feng, S. M. ^{[1
,2
]}

Chen, L. C. ^{[1
,2
]}

Yu, R. C. ^{[1
,2
]}

Arguello, C. ^{[3
]}

Goko, T. ^{[3
]}

Ning, Fanlong ^{[3
,4
]}

Zhang, Jinsong ^{[5
]}

Wang, Yayu ^{[5
]}

Aczel, A. A. ^{[6
]}

Munsie, T. ^{[6
]}

Williams, T. J. ^{[6
]}

Luke, G. M. ^{[6
]}

Kakeshita, T. ^{[7
]}

Uchida, S. ^{[7
]}

Higemoto, W. ^{[8
]}

Ito, T. U. ^{[8
]}

Gu, Bo ^{[8
,9
]}

Maekawa, S. ^{[8
,9
]}

Morris, G. D. ^{[10
]}

Uemura, Y. J. ^{[3
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Columbia Univ, Dept Phys, New York, NY 10027 USA

[4] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[5] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[6] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada

[7] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1138656, Japan

[8] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

[9] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[10] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

NATURE COMMUNICATIONS | 2011年 / 2卷

基金：

加拿大自然科学与工程研究理事会; 美国国家科学基金会;

关键词：

TETRAHEDRAL SEMICONDUCTOR; SPIN RELAXATION; LIZNAS; LIFEAS; SUPERCONDUCTIVITY;

D O I：

10.1038/ncomms1425

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In a prototypical ferromagnet (Ga, Mn) As based on a III-V semiconductor, substitution of divalent Mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga, Mn) substitution also prohibits electron doping. To overcome these difficulties, Masek et al. theoretically proposed systems based on a I-II-V semiconductor LiZnAs, where isovalent (Zn, Mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li(1+y)(Zn(1-x)Mn(x)) As in bulk materials. Ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess (y = 0.05-0.2) compounds with Mn concentrations of x = 0.02-0.15, which have p-type metallic carriers. This is presumably due to excess Li in substitutional Zn sites. Semiconducting LiZnAs, ferromagnetic Li(Zn,Mn) As, antiferromagnetic LiMnAs, and superconducting LiFeAs systems share square lattice As layers, which may enable development of novel junction devices in the future.

引用

页数：5

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