Numerical and Experimental Study of Fan-out Wafer Level Package Strength

被引:1
作者
Xu, Cheng [1 ]
Zhong, Z. W. [1 ]
Choi, W. K. [2 ]
机构
[1] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore, Singapore
[2] JCET STATS ChipPAC Pte Ltd, Singapore, Singapore
来源
2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017) | 2017年
关键词
fan-out wafer level package; package strength; three-point bending test; finite element method; SILICON DIE STRENGTH; FRACTURE; TESTS;
D O I
10.1109/ECTC.2017.152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fan-out wafer level packaging technology becomes more attractive and popular in the semiconductor packaging industry. The fan-out wafer level package (FOWLP) has the feature of integrating various devices in a tiny form factor. Since the FOWLP size is compact and small, its package strength is critical to its reliability. In this work, the three-point bending test method and finite element method was used to evaluate the FOWLP strength. Two different structural FOWLP were built, and their numerical models were created. The results showed that the FOWLP experiment and simulation flexure strength results matched each other in the lower failure possibility area closely. However, the simulation results under-estimated the FOWLP failure possibility to compare with the experiment results in the upper failure possibility area.
引用
收藏
页码:2187 / 2192
页数:6
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