Kinetics of interfacial layer formation during deposition of HfO2 on silicon

被引：13

作者：

Essary, C

Howard, JM

Craciun, V ^{[1
]}

Craciun, D

Singh, RK

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Major Analyt Instrumentat Ctr, Gainesville, FL 32611 USA

[2] Natl Inst Laser Plasma & Radiat Phys, Laser Dept, Bucharest, Romania

来源：

THIN SOLID FILMS | 2004年 / 450卷 / 01期

关键词：

laser ablation; hafnium oxide; thin films; high-k dielectrics; interfacial layer;

D O I：

10.1016/j.tsf.2003.10.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Very thin HfO2 films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO2 and SiO2 without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO2, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO2, therefore corroborating the XPS results. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：111 / 113

页数：3

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