Kinetics of interfacial layer formation during deposition of HfO2 on silicon

被引:13
|
作者
Essary, C
Howard, JM
Craciun, V [1 ]
Craciun, D
Singh, RK
机构
[1] Univ Florida, Dept Mat Sci & Engn, Major Analyt Instrumentat Ctr, Gainesville, FL 32611 USA
[2] Natl Inst Laser Plasma & Radiat Phys, Laser Dept, Bucharest, Romania
关键词
laser ablation; hafnium oxide; thin films; high-k dielectrics; interfacial layer;
D O I
10.1016/j.tsf.2003.10.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Very thin HfO2 films were deposited directly on Si substrates by the pulsed laser deposition technique in a wide range of substrate temperatures and oxygen pressures to investigate the kinetics of the interfacial layer formation. Angle-resolved X-ray photoelectron spectroscopy (XPS) investigations showed that the interfacial layer formed between the Si substrate and the deposited oxide contains a mixture of HfO2 and SiO2 without any strong evidence to support the formation of a silicate-type compound. X-Ray reflectivity measurements showed that the mass density of the interfacial layer is higher than that of pure SiO2, while spectroscopic ellipsometry measurements showed that the refractive index is higher than that of pure SiO2, therefore corroborating the XPS results. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:111 / 113
页数:3
相关论文
共 50 条
  • [31] In situ study of the atomic layer deposition of HfO2 on Si
    Kolanek, Krzysztof
    Tallarida, Massimo
    Michling, Marcel
    Schmeisser, Dieter
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (01):
  • [32] Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO2 on silicon
    Li, Shibin
    Chen, Zhi
    DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2010, 28 (02): : 89 - +
  • [33] Effects of precursors on nucleation in atomic layer deposition of HfO2
    Aarik, J
    Aidla, A
    Kikas, A
    Käämbre, T
    Rammula, R
    Ritslaid, P
    Uustare, T
    Sammelselg, V
    APPLIED SURFACE SCIENCE, 2004, 230 (1-4) : 292 - 300
  • [34] Atomic layer deposition of HfO2 using alkoxides as precursors
    Mui, C
    Musgrave, CB
    JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (39): : 15150 - 15164
  • [35] Interfacial SiO2 scavenging kinetics in HfO2 gate stack
    Li, Xiuyan
    Nishimura, Tomonori
    Toriumi, Akira
    APPLIED PHYSICS LETTERS, 2016, 109 (20)
  • [36] Reaction of interfacial layer and trapping in HfO2 gated MOS structures
    Liu, YX
    Wang, XW
    Ma, TP
    Lee, LS
    Tsai, MJ
    Chou, YW
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 399 - 402
  • [37] Atomic Layer Deposition of HfO2 Using HF Etched Thermal and RTP SiO2 as Interfacial Layers
    Han, Lei
    Chen, Zhi David
    DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2014, 61 (02): : 143 - 149
  • [38] The influence of Hf interlayers for ferroelectric non-doped HfO2 with suppressing the interfacial layer formation
    Ohmi, Shun-ichiro
    Kataoka, Masakazu
    Kim, Min Gee
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SI)
  • [39] Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
    Gusev, EP
    Cabral, C
    Copel, M
    D'Emic, C
    Gribelyuk, M
    MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) : 145 - 151
  • [40] Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
    Gilmer, DC
    Hegde, R
    Cotton, R
    Garcia, R
    Dhandapani, V
    Triyoso, D
    Roan, D
    Franke, A
    Rai, R
    Prabhu, L
    Hobbs, C
    Grant, JM
    La, L
    Samavedam, S
    Taylor, B
    Tseng, H
    Tobin, P
    APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1288 - 1290