Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor

被引：0

作者：

Tsai, Jung-Hui ^{[1
]}

Guo, Der-Feng ^{[2
]}

Weng, Tzu-Yen ^{[3
]}

Wu, Ching-Han ^{[3
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, 116 Ho Ping 1st Rd, Kaohsiung, Taiwan

[2] AF Acad, Dept Elect Engn, Kaohsiung 820, Taiwan

[3] Natl Kaohsiung Normal Univ, Dept Phys, Kaohsiung 802, Taiwan

来源：

2006 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES | 2006年

关键词：

step-emitter; heterojunction bipolar transistor; confinement effect; offset voltage; potential spike;

D O I：

10.1109/COMMAD.2006.4429900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance InGaP/GaAs/InGaAs step-emitter bipolar transistor is demonstrated. The energy bands and carrier distributions are described by theoretical analysis. Because the confinement effect for holes is substantially enhanced by the addition of an InGaAs quantum well between base-emitter junction as compared to the conventional InGaP/GaAs heterojunction bipolar transistor, the experimental device exhibits a high current gain up to 220. In particular, a relatively low collector-emitter offset voltage of 70 mV is observed, attributed to the neglect of potential spike at base-emitter junction by the employments of an n-type GaAs emitter and an n-InGaAs quantum well. Consequently, the excellent performances of the studied device provide a promise for linear amplifiers and circuit applications.

引用

页码：142 / +

页数：2

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