A Review of Super Junction LDMOS

被引：8

作者：

Hu, Chen ^{[1
]}

Li, Ming ^{[1
]}

He, Xiaoying ^{[1
]}

Sun, Weifeng ^{[1
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

IETE TECHNICAL REVIEW | 2011年 / 28卷 / 04期

关键词：

Breakdown voltage; Bulk silicon; Lateral double-diffused MOSFET; Silicon on insulator; Silicon on sapphire; Specific on-resistance; Substrate assisted depletion; Super junction;

D O I：

10.4103/0256-4602.83553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Super Junction Lateral Double-diffused MOSFET (SJ-LDMOS) is one of the important attractive devices in high-voltage integrated circuit and power integrated circuit. However, the SJ-LDMOS is generally implemented on a low-resistance substrate, which always suffers from substrate-assisted depletion (SAD) effect, which thus degrades the performance of devices. A number of literatures have been published to solve the SAD effect and improve performance. This review summarizes the developments made in SJ-LDMOS based on bulk silicon, silicon on insulator, and silicon on sapphire in the last 10 years. Finally, the future work what researchers can do on the SJ-LDMOS also has been proposed.

引用

页码：327 / 335

页数：9

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