The impact of aging effects and manufacturing variation on SRAM soft-error rate

被引：42

作者：

Cannon, Ethan H. ^{[1
]}

KleinOsowski, A. J. ^{[2
]}

Kanj, Rouwaida ^{[2
]}

Reinhardt, Daniel D. ^{[1
]}

Joshi, Rajiv V. ^{[3
]}

机构：

[1] IBM Syst & Technol Grp, Essex Jct, VT 05452 USA

[2] IBM Corp, Austin Res Lab, Austin, TX 78758 USA

[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2008年 / 8卷 / 01期

关键词：

critical charge (Qcrit); radiation event; single event upset (SEU); soft-error rate (SER); soft errors;

D O I：

10.1109/TDMR.2007.912983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes modeling and hardware results of how the soft-error rate (SER) of a 65-nm silicon-on-insulator SRAM memory cell changes over time, as semiconductor aging effects shift the SRAM cell behavior. This paper also describes how the SER changes in the presence of systematic and random manufacturing variation.

引用

页码：145 / 152

页数：8

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