Study of amorphous tin oxide thin films for ISFET applications

被引：71
作者：
Liao, HK
Chou, JC
Chung, WY
Sun, TP
Hsiung, SK [1 ]
机构：
[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Yunlin, Taiwan
[3] Chung Yu Jr Coll Business & Adm, Dept Management Informat Syst, Keelung 201, Taiwan
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 50卷 / 02期
关键词：
tin oxide (SnO2); thermal evaporation; pH-ISFET; C-V; pH sensitivity;
D O I：
10.1016/S0925-4005(98)00162-2
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this study, an amorphous tin oxide (SnO2) obtained by thermal evaporation was used as a pH-sensitive material for pH-ISFETs. Capacitance-voltage (C-V) curves of the EIS diode were used to evaluate pH response of SnO2 thin film. Subsequently, SnO2/SiO2 gate ISFET was fabricated and pH sensitivity was determined through a shift in the: threshold voltage of an ISFET sensor. The experimental data show that the SnO2/SiO2 gate ISFET sensors have a linear pH response of about 58 mV pH(-1) in a concentration range between pH 2 and pH 10. In addition, the other characteristics of this sensor, such as temperature effect, drift effect, hysteresis and response time were also investigated in this paper. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：104 / 109
页数：6
相关论文
共 17 条
  • [1] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS
    BERGVELD, P
    [J]. IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) : 70 - &
  • [2] BERGVELED P, 1988, ANAL BIOMEDICAL APPL
  • [3] CHENG S, 1989, IEEE CIRCUITS DE JUL, P31
  • [4] DIGIULIO M, 1995, SENSOR ACTUAT B-CHEM, V24, P465
  • [5] PH-DEPENDENCE OF THE SI/SIO2 INTERFACE STATE DENSITY FOR EOS SYSTEMS - QUASI-STATIC AND AC CONDUCTANCE METHODS
    DIOT, JL
    JOSEPH, J
    MARTIN, JR
    CLECHET, P
    [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 193 (1-2): : 75 - 88
  • [6] ELECTRONIC SEMICONDUCTING OXIDES AS PH SENSORS
    FOG, A
    BUCK, RP
    [J]. SENSORS AND ACTUATORS, 1984, 5 (02): : 137 - 146
  • [7] A GENERALIZED THEORY OF AN "ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    FUNG, CD
    CHEUNG, PW
    KO, WH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 8 - 18
  • [8] GARDE A, 1995, SENSOR ACTUAT B-CHEM, V26, P341
  • [9] TA2O5-GATES OF PH-SENSITIVE DEVICES - COMPARATIVE SPECTROSCOPIC AND ELECTRICAL STUDIES
    GIMMEL, P
    GOMPF, B
    SCHMEISSER, D
    WIEMHOFER, HD
    GOPEL, W
    KLEIN, M
    [J]. SENSORS AND ACTUATORS, 1989, 17 (1-2): : 195 - 202
  • [10] SNO2 SENSORS - CURRENT STATUS AND FUTURE-PROSPECTS
    GOPEL, W
    SCHIERBAUM, KD
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) : 1 - 12
12