High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure

被引：5

作者：

Liu, Jiang ^{[1
]}

Han, Chuanyu ^{[1
]}

Yang, Mingchao ^{[1
]}

Liu, Weihua ^{[1
]}

Geng, Li ^{[1
]}

Hao, Yue ^{[2
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China

[2] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 09期

关键词：

Schottky barriers; Argon; Substrates; Ion implantation; Current density; Schottky diodes; Fabrication; Argon (Ar) ion implantation; GaN; self-alignment technique; trench structure; DEVICES DEVICE PRINCIPLES; BREAKDOWN VOLTAGE; RECTIFIERS;

D O I：

10.1109/TED.2022.3188950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ion implantation. The fabricated diodes achieve a high current ON/OFF ratio of 10(8) and high breakdown voltage (BV) of 656 V due to the reduced surface electric field effect. Besides, the temperature-dependent reverse leakage characteristics show that two Poole-Frenkel emission (PFE) processes dominate the carrier transport. This work shows great potential of the self-alignment trench structure in fabricating GaN vertical SBDs to improve the BV with simply fabrication process.

引用

页码：5082 / 5087

页数：6

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