Effects of buffer layer on the dielectric properties of BaTiO3 thin films prepared by sol-gel processing

被引：19

作者：

Song, Sannian ^{[1
]}

Zhai, Jiwei ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 145卷 / 1-3期

基金：

高等学校博士学科点专项科研基金;

关键词：

thin films; buffer layer; stress; dielectric properties;

D O I：

10.1016/j.mseb.2007.09.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric BaTiO3 (BT) thin films were deposited on Pt/Ti/SiO2/Si substrates by sol-gel technique. The thickness of the La0.5Sr0.5CoO3 (LSCO), serving as a buffer layer, was varied from 0 nm to 2 10 nm, to study the dependence of dielectric properties of the BT thin films on the buffer layer thickness and stress. The influence of buffer layer thickness on the phase and microstructure of the thin films was also examined. Dielectric properties of the thin films were investigated as a function of temperature and direct current (dc) electric field. The results showed that the LSCO buffer layer strongly influenced the microstructure and the dielectric properties of the films. The BT thin film with 150 nm thickness LSCO buffer layer had the least loss, smallest leakage current and largest dielectric constant. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：28 / 33

页数：6

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