Tunable and predetermined bandgap emissions in alloyed ZnSxSe1-x nanowires

被引：94

作者：

Wang, Min ^{[1
,2
]}

Fei, Guang Tao ^{[1
,2
]}

Zhang, Yu Gang ^{[1
,2
]}

Kong, Ming Guang ^{[1
,2
]}

De Zhang, Li ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 24期

关键词：

D O I：

10.1002/adma.200602919

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1-x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1-x nanowires with the corresponding composition x.

引用

收藏

页码：4491 / +

页数：5

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