Tunable and predetermined bandgap emissions in alloyed ZnSxSe1-x nanowires

被引：94
作者：
Wang, Min [1 ,2 ]
Fei, Guang Tao [1 ,2 ]
Zhang, Yu Gang [1 ,2 ]
Kong, Ming Guang [1 ,2 ]
De Zhang, Li [1 ,2 ]
机构：
[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China
来源：
ADVANCED MATERIALS | 2007年 / 19卷 / 24期
关键词：
D O I：
10.1002/adma.200602919
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1-x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1-x nanowires with the corresponding composition x.
引用
收藏
页码：4491 / +
页数：5
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