High power and high brightness laser diode structures at 980nm using an Al-free active region.

被引：19
|
作者：
Auzanneau, SC [1 ]
Krakowski, M [1 ]
Berlie, F [1 ]
Calligaro, M [1 ]
Robert, Y [1 ]
Parillaud, O [1 ]
Lecomte, M [1 ]
Boulant, B [1 ]
Fillardet, T [1 ]
机构：
[1] Thales Res & Technol, F-91404 Orsay, France
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS II | 2003年 / 4995卷
关键词：
semiconductor laser; high power laser diode. high brightness laser diode; broad area laser; tapered laser structure; index guiding; gain guiding; beam quality; bar of laser diodes; reliability; 980; nm;
D O I：
10.1117/12.475765
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High bit rate, WDM, networks are reliant on Er or Er/Yb doped fibre amplifiers. Reliable, high power laser diodes at 980nm and 1480nm are key devices for pumping these amplifiers. We have developed several 980nm laser diode structures at 980nm, using an Aluminium free active region and standard AR/HR coatings on the facets. Our lasers show low optical losses, low threshold current density and a high external differential efficiency. We demonstrate a mini-bar of small angle index guided tapered laser diodes (emissive width of 3mm) with an optical output power of 20W at 33A under CW operation (25degreesC). The far field of the slow axis has a Gaussian single lobed shape, with a FWHM of 3.5degrees at maximum power, which is two time less than obtained with multimode broad area lasers. With such a device, we expect to couple 10W into a 100mum diameter fibre. We also demonstrate a large aperture gain-guided tapered laser with an output power of 2.4W and a calculated M-1/c2(2) = 3, the M-1/c2(2) factor being calculated with the method based on measurements of the fields profiles widthes at 1/e(2).
引用
收藏
页码：184 / 195
页数：12
相关论文
共 50 条
  • [1] High power and high brightness laser diode structures at 980nm using Al-free materials
    Krakowski, M
    Auzanneau, SC
    Calligaro, M
    Parillaud, O
    Collot, P
    Lecomte, M
    Boulant, B
    Fillardet, T
    NOVEL IN-PLANE SEMICONDUCTOR LASERS, 2002, 4651 : 80 - 91
  • [2] High-Brightness tapered laser diode bars and optical modules with Al-free active region (λ=980 nm)
    Krakowski, M
    Calligaro, A
    Larat, C
    Lecomte, M
    Michel, N
    Parillaud, O
    Boulant, B
    Fillardet, T
    SOLID STATE LASER TECHNOLOGIES AND FEMTOSECOND PHENOMENA, 2004, 5620 : 128 - 136
  • [3] 1W high brightness index guided tapered laser at 980 nm using Al-free active region materials
    Krakowski, M
    Auzanneau, SC
    Berlie, F
    Calligaro, M
    Robert, Y
    Parillaud, O
    Lecomte, M
    ELECTRONICS LETTERS, 2003, 39 (15) : 1122 - 1123
  • [4] High-power, high-brightness tapered lasers with an Al-free active region at 915 nm
    Michel, N.
    Hassiaoui, I.
    Lecomte, M.
    Parillaud, O.
    Calligaro, M.
    Krakowski, M.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS V, 2006, 6133
  • [5] High-power, high-brightness Al-free active region tapered lasers at 915 nm
    Hassiaoui, I.
    Michel, N.
    Lecomte, M.
    Parillaud, O.
    Calligaro, M.
    Krakowski, M.
    SEMICONDUCTOR LASERS AND LASER DYNAMICS II, 2006, 6184
  • [6] High-power Al-free active region diode lasers
    Mawst, LJ
    Wade, JK
    Al-Muhanna, A
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 2 - 10
  • [7] High-brightness tapered lasers with an Al-free active region at 1060 nm
    Ruiz, M.
    Odriozola, H.
    Kwok, C. H.
    Michel, N.
    Calligaro, M.
    Lecomte, M.
    Parillaud, O.
    Krakowski, M.
    Tijero, J. M. G.
    Esquivias, I.
    Penty, R. V.
    White, I. H.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS VIII, 2009, 7230
  • [8] Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm
    Michel, N.
    Calligaro, M.
    Lecomte, A.
    Parillaud, O.
    Krakowski, M.
    Tijero, J. M. G.
    Odriozola, H.
    Esquivias, I.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, 2008, 6909
  • [9] High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region
    Gaimard, Quentin
    Aubin, Guy
    Merghem, Kamel
    Krakowski, Michel
    Parillaud, Olivier
    Barbay, Sylvain
    Ramdane, Abderrahim
    IEEE PHOTONICS JOURNAL, 2019, 11 (01):
  • [10] High Power Al-free CW 808nm Laser Diode Bar
    Yang Fan
    Liu Gangming
    Wu Cunxue
    Yan Zhiwan
    AOPC 2020: ADVANCED LASER TECHNOLOGY AND APPLICATION, 2020, 11562
12345