Large-scale preparation of faceted Si3N4 nanorods from β-SiC nanowires

被引：11

作者：

Bechelany, M. ^{[1
]}

Brioude, A. ^{[1
]}

Bernard, S. ^{[1
]}

Ferro, G. ^{[1
]}

Cornu, D. ^{[1
]}

Miele, P. ^{[1
]}

机构：

[1] Univ Lyon 1, CNRS, UMR 5615, Lab Multimat & Interfaces, F-69622 Villeurbanne, France

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 33期

关键词：

D O I：

10.1088/0957-4484/18/33/335305

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Batch-fabricated SiC nanowires were heated under an ammoniac flow up to 1400. C. The ensuing product was characterized by SEM, HRTEM, EDX and XRD. As we found, SiC nanowires were completely converted into faceted alpha- Si3N4 nanorods with diameters ranging from 10 to 500 nm and lengths lower than 10 mu m. These nanorods present hexagonal cross sections. We suggest a growth mechanism based on the progressive elimination of carbon through hydrogenation reactions and the growth of silicon nitride nanorods via the high-temperature nitridation of silicon.

引用

页数：6

共 43 条

[1]

BECHELANY M, 2006, Patent No. 2006067308

[2] A Raman spectroscopy study of individual SiC nanowires [J].