A comparison of lasing mechanisms in ZnSe and GaAs

被引：24
作者：
Galbraith, I [1 ]
Koch, SW [1 ]
机构：
[1] UNIV MARBURG,DEPT PHYS,W-3550 MARBURG,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00862-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs, This explains the difference in their respective lasing mechanisms.
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页码：667 / 671
页数：5
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