Study on chemical solution deposition of aluminum-doped zinc oxide films

被引：17
|
作者：
Li, Gang [1 ]
Zhu, Xuebin [1 ]
Lei, Hechang [1 ]
Song, Wenhai [1 ]
Yang, Zhaorong [1 ]
Dai, Jianming [1 ]
Sun, Yuping [1 ]
Pan, Xu [2 ]
Dai, Songyuan [2 ]
机构：
[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Key Lab New Thin Film Solar Cells, Inst Plasma Phys, Hefei 230031, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 505卷 / 02期
关键词：
ZnO:Al; Sol-gel; Annealing temperature; Transparent conductive oxide; ZNO THIN-FILMS; SOL-GEL TECHNIQUE; OPTICAL-PROPERTIES; THICKNESS DEPENDENCE; TRANSPARENT; MICROSTRUCTURE; ORIENTATION; LAYER; AL; RESISTIVITY;
D O I：
10.1016/j.jallcom.2010.06.083
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnO:Al thin films were prepared on n-type (1 0 0)-oriented Si and glass slide substrates by chemical solution deposition method. The effects of Al content, the annealing temperature in air, the annealing temperature in reducing atmosphere and the solution concentration on the structural, morphological, electrical and optical characteristics have been investigated systematically. The results show that the processing parameters play an important role in the microstructures as well as the properties. The lowest resistivity value (0.091 Omega cm) was observed by optimization of the processing parameters. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：434 / 442
页数：9
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