Structural and optical properties of (11(2)over-bar2) InGaN quantum wells compared to (0001) and (11(2)over-bar0)

被引：7
|
作者：
Pristovsek, Markus [1 ]
Han, Yisong [1 ,4 ]
Zhu, Tongtong [1 ]
Oehler, Fabrice [1 ,5 ]
Tang, Fengzai [1 ]
Oliver, Rachel A. [1 ]
Humphreys, Colin J. [1 ]
Tytko, Darius [2 ]
Choi, Pyuck-Pa [2 ]
Raabe, Dierk [2 ]
Brunner, Frank [3 ]
Weyers, Markus [3 ]
机构：
[1] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England
[2] Max Planck Inst Eisenforsch GmbH, Dept Microstruct Phys & Alloy Design, Max Planck Str 1, D-40237 Dusseldorf, Germany
[3] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[4] Univ Ulster, Nanotechnol & Integrated Bioengn Ctr, Newtownabbey BT37 0QB, North Ireland
[5] CNRS, Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 08期
基金：
英国工程与自然科学研究理事会; 欧盟第七框架计划;
关键词：
InGaN; semi-polar; quantum well; atom probe tomography; step-bunching; optical properties; LIGHT-EMITTING-DIODES; GROWTH MODE; SAPPHIRE; PLANE; TEMPLATES; RELAXATION; EFFICIENCY; EMISSION; NONPOLAR; SURFACE;
D O I：
10.1088/0268-1242/31/8/085007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We benchmarked growth, microstructure and photo luminescence (PL) of (11 (2) over bar2) InGaN quantum wells (QWs) against (0001) and (11 (2) over bar0). In incorporation, growth rate and the critical thickness of (11 (2) over bar2) QWs are slightly lower than (0001) QWs, while the In incorporation on (11 (2) over bar0) is reduced by a factor of three. A small step-bunching causes slight fluctuations of the emission wavelength. Transmission electron microscopy as well as atom probe tomography (APT) found very flat interfaces with little In segregation even for 20% In content. APT frequency distribution analysis revealed some deviation from a random InGaN alloy, but not as severe as for (11 (2) over bar0). The slight deviation of (11 (2) over bar2) QWs from an ideal random alloy did not broaden the 300 K PL, the line widths were similar for (11 (2) over bar2) and (0001) while (11 (2) over bar0) QWs were broader. Despite the high structural quality and narrow PL, the integrated PL signal at 300 K was about 4 x lower on (11 (2) over bar2) and more than 10 x lower on (11 (2) over bar0).
引用
收藏
页数：8
相关论文
共 50 条
  • [21] Exciton localization in polar and semipolar (11(2)over-bar2) In0.2Ga0.8N/GaN multiple quantum wells
    Dinh, Duc V.
    Presa, Silvino
    Maaskant, Pleun P.
    Corbett, Brian
    Parbrook, Peter J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (08)
  • [22] Theoretical studies on in-plane polarization characteristics of (11(2)over-bar0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates
    Park, Seoung-Hwan
    Shim, Jong-In
    Shin, Dong-Soo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2022, 81 (01) : 45 - 48
  • [23] On the optical polarization properties of semipolar (20(2)over-bar1) and (20(2)over-bar(1)over-bar) InGaN/GaN quantum wells
    Mounir, Christian
    Koslow, Ingrid L.
    Wernicke, Tim
    Kneissl, Michael
    Kuritzky, Leah Y.
    Adamski, Nicholas L.
    Oh, Sang Ho
    Pynn, Christopher D.
    DenBaars, Steven P.
    Nakamura, Shuji
    Speck, James S.
    Schwarz, Ulrich T.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (08)
  • [24] Partial strain relaxation effects on polarization anisotropy of semipolar (11(2)over-bar2) InGaN/GaN quantum well structures
    Park, Seoung-Hwan
    Mishra, Dhaneshwar
    Pak, Y. Eugene
    Park, Chang Young
    Yoo, Seung-Hyun
    Cho, Yong-Hee
    Shim, Mun-Bo
    Hwang, Sangheum
    Kim, Sungjin
    APPLIED PHYSICS LETTERS, 2013, 103 (22)
  • [25] Growth evolution of polar-plane-free faceted GaN structures on (11(2)over-bar2) and ((1)over-bar(1)over-bar2(2)over-bar) GaN substrates
    Matsuda, Yoshinobu
    Funato, Mitsuru
    Kawakami, Yoichi
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (16)
  • [26] InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (11(2)over-bar2) GaN substrates
    Nishinaka, Junichi
    Funato, Mitsuru
    Kido, Ryohei
    Kawakami, Yoichi
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (01): : 78 - 83
  • [27] Epitaxial lateral overgrowth on (2(1)over-bar(1)over-bar0) a-plane GaN with [0(1)over-bar11]-oriented stripes
    Wernicke, T.
    Zeimer, U.
    Netzel, C.
    Brunner, F.
    Knauer, A.
    Weyers, M.
    Kneissl, M.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 2895 - 2898
  • [28] Long wavelength red to green emissions from {11 2 over bar 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer
    Tawarazako, Yuya
    Nishi, Naoya
    Nakata, Atsuto
    Okada, Narihito
    Kurai, Satoshi
    Yamada, Yoichi
    Tadatomo, Kazuyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SA)
  • [29] Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes
    Dinh, Duc V.
    Corbett, Brian
    Parbrook, Peter J.
    Koslow, Ingrid. L.
    Rychetsky, Monir
    Guttmann, Martin
    Wernicke, Tim
    Kneissl, Michael
    Mounir, Christian
    Schwarz, Ulrich
    Glaab, Johannes
    Netzel, Carsten
    Brunner, Frank
    Weyers, Markus
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (13)
  • [30] Polarity of GaN with polar {0001} and semipolar {10(1)over-bar1}, {20(2)over-bar1}, {11(2)over-bar2} orientations by x-ray photoelectron diffraction
    Romanyuk, Oleksandr
    Jiricek, Petr
    Paskova, Tania
    Bartos, Igor
    JOURNAL OF MATERIALS RESEARCH, 2015, 30 (19) : 2881 - 2892
12345