Noise and charge transport in polymer thin film structures

被引：2
|
作者：
Marinov, O [1 ]
Deen, MJ [1 ]
Yu, J [1 ]
Vamvounis, G [1 ]
Holdcroft, S [1 ]
Woods, W [1 ]
机构：
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
来源：
NOISE IN DEVICES AND CIRCUITS | 2003年 / 5113卷
关键词：
organic field-effect transistors; polymer TFT; low-frequency noise and fluctuation; charge transport; injection-drift-limited model; charge hopping; mobility noise;
D O I：
10.1117/12.485990
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
The low frequency noise (LFN) properties of. the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET's (PFET's), channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.
引用
收藏
页码：301 / 312
页数：12
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