Study on the behaviors of impurities in cadmium zinc telluride

被引：30

作者：

Wang, Tao ^{[1
]}

Jie, Wanqi

Zhang, Jijun

Yang, Ge

Zeng, Dongmei

Xu, Yadong

Ma, Shuying

Hua, Hui

He, Ke

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

[2] Changan Univ, Geotech Engn Opening Lab, Xian 710064, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期

基金：

中国国家自然科学基金;

关键词：

impurities; segregation; Bridgman technique; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2007.03.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Impurities in three cadmium zinc telluride (Cd1-xZnxTe or CZT) ingots grown by the modified vertical Bridgman (MVB) method were examined by using inductively coupled plasma mass spectrometry (ICP-MS). The distribution and segregation of impurities along the CZT ingots were found to vary with the concentration and the growth conditions. Photoluminescence (PL) and voltage-current measurements were performed to evaluate the effects of the impurities on the optical and electrical properties. The red shift of the (D, X) and DAP positions and the broadening of the DAP band in PL spectrum were observed in the high-impurity CZT ingot. The voltage-current measurement shows a higher resistivity when the impurity concentration was increased. The above results imply that the high-impurity CZT ingot was highly compensated. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：313 / 316

页数：4

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