Hall-effect mobility of pentacene films prepared by the thermal evaporating method with different substrate temperature

被引：19

作者：

Lin, Yow-Jon ^{[1
]}

Tsao, Hou-Yen ^{[1
,2
]}

Liu, Day-Shan ^{[3
]}

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[3] Natl Formosa Univ, Grad Inst Electroopt & Mat Sci, Huwei 632, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期

关键词：

Hall mobility; hopping conduction; metal-insulator transition; organic semiconductors; semiconductor growth; semiconductor thin films; vacuum deposition; TRANSISTORS; MORPHOLOGY;

D O I：

10.1063/1.4733293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the Hall-effect mobility of pentacene films prepared by the thermal evaporating method with different substrate temperature. A crossover from coherent bandlike charge transport with mobilities up to several tens of cm(2)/V-s at low temperature to an incoherent hopping motion at high temperature is observed. The carrier mobilities of pentacene exhibit a hopping-to-band transition around room temperature. An exhibition of high mobility of pentacene films prepared with substrate temperature of 90 degrees C is attributed to the increased spacing between molecules. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733293]

引用

页数：3

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