Vertical heterojunction field-effect transistors utilizing re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates

被引：13

作者：

Yaegassi, Seiji ^{[1
]}

Okada, Masaya ^{[2
]}

Saitou, Yuu ^{[2
]}

Yokoyama, Mitsunori ^{[1
]}

Nakata, Ken ^{[1
]}

Katayama, Koji ^{[2
]}

Ueno, Masaki ^{[2
]}

Kiyama, Makoto ^{[2
]}

Katsuyama, Tsukuru ^{[1
]}

Nakamura, Takao ^{[2
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, 1 Taya, Yokohama, Kanagawa 2448588, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期

关键词：

AlGaN; GaN; field-effect transistor; vertical; heterojunction; normally-off; GaN substrate;

D O I：

10.1002/pssc.201000439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical heterojunction field-effect transistors (VHFETs) utilizing re-grown AlGaN/GaN two-dimensional electron gas (2DEG) channels on free-standing GaN substrates have been developed. The VHFETs exhibited a specific on-resistance (RonA) of 7.6 m Omega cm(2) at a threshold voltage (V-th) of -1.1 V and a breakdown voltage (VB) of 672 V. The breakdown voltage and the figure of merit (VB2/RonA) are the highest among those of the GaN-based vertical transistors ever reported. It was demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and Al concentration. A normally-off operation was achieved with a 10-nm-thick Al0.2Ga0.8N layer. The possibility that VHFET with smaller current collapse phenomena than planar HEMT was revealed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：450 / 452

页数：3

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