Microstructure and dielectric dispersion of low-temperature sintering AlN ceramics

被引：0

作者：

Fang, ZY

Liu, YC

Wu, Y

Zhou, HP

机构：

来源：

PROCEEDINGS OF THE FIRST CHINA INTERNATIONAL CONFERENCE ON HIGH-PERFORMANCE CERAMICS | 2001年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fully densified aluminum nitride with Dy2O3-Li2O-CaO-B2O3 as additives was prepared at rather low temperatures (T less than or equal to 1650 degreesC). Thermal conductivity of the sample sintered at 1600 degreesC for 6h was 112 W/m(.)k. The. dielectric behavior of aluminum nitride was also studied. Space charge polarization was regarded as the main polarization mechanism. It was observed that the dielectric constant and dielectric loss decreased with the increase of frequency from 5 KHz to 5 Mhz at room temperature.

引用

页码：406 / 408

页数：3

共 4 条

[1] EFFECT OF HEAT-TREATMENT ON THE MICROSTRUCTURE AND PROPERTIES OF DENSE ALN SINTERED WITH Y2O3 ADDITIONS [J].