Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process

被引：13

作者：

Lee, Ko-Tao ^{[1
]}

Lee, Yeeu-Chang ^{[2
]}

Tu, Sheng-Han ^{[1
]}

Lin, Ching-Liang ^{[3
]}

Chen, Po-Hen ^{[3
]}

Liu, Cheng-Yi ^{[3
]}

Chang, Jeng-Yang ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Opt & Photon, Jhongli 32001, Taiwan

[2] Chung Yuan Christian Univ, Dept Mech Engn, Chungli 32023, Taiwan

[3] Natl Cent Univ, Dept Chem & Mat Engn, Jhongli 32001, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 02期

关键词：

damage; thermal gradient; LED; LLO;

D O I：

10.1143/JJAP.47.930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertical-type gallium nitride blue light-emitting diode on silicon was prepared by using a laser lift-off process. A grid like surface was obtained after the laser lift-off process. The central part of the grid preserves a uniform surface morphology, but damage occurred and a crack was formed on the peripheral area of a grid. Though a comparison of the crystalline and optical properties of the central and peripheral areas, the high thermal gradient of the peripheral area under pulse laser shot irradiation was found to play an important role during the laser lift-off process.

引用

页码：930 / 932

页数：3

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