Super-high brightness and high-spin-polarization photocathode

被引:47
作者
Jin, Xiuguang [1 ]
Yamamoto, Naoto [2 ]
Nakagawa, Yasuhide [2 ]
Mano, Atsushi [2 ]
Kato, Takanori [1 ]
Tanioku, Masatoshi [1 ]
Ujihara, Toru [1 ]
Takeda, Yoshikazu [1 ]
Okumi, Shoji [2 ]
Yamamoto, Masahiro [2 ]
Nakanishi, Tsutomu [2 ]
Saka, Takashi [3 ]
Horinaka, Hiromichi [4 ]
Kato, Toshihiro [5 ]
Yasue, Tsuneo [6 ]
Koshikawa, Takanori [6 ]
机构
[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Sci, Chikusa Ku, Nagoya, Aichi 4648602, Japan
[3] Daido Inst Technol, Minami Ku, Nagoya, Aichi 4578530, Japan
[4] Osaka Prefecture Univ, Grad Sch Engn, Naka Ku, Sakai, Osaka 5998531, Japan
[5] Daido Steel Co Ltd, Minami Ku, Nagoya, Aichi 4578545, Japan
[6] Osaka Electrocommun Univ, Acad Frontier Promot Ctr, Fundamental Elect Res Inst, Neyagawa, Osaka 5728530, Japan
关键词
D O I
10.1143/APEX.1.045002
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using a newly developed transmission-type photocathode, an electron beam of super-high brightness [(1.3 +/- 0.5) x 10(7) A.cm(-2).sr(-1)] was achieved. Moreover, the spin-polarization was as high as 90%. We fabricated a transmission-type photocathode based on a GaAs-GaAsP strained superlattice on a GaP substrate in order to enhance the brightness and polarization greatly. In this system, a laser beam is introduced through the transparent GaP substrate. The beam is focused on the superlattice active layer with a short focal length lens. Excited electrons are generated in a small area and extracted from the surface. The shrinkage of the electron generation area improved the brightness. In addition, a GaAs layer was inserted between the GaP substrate and the GaAsP buffer layer to control the strain relaxation process in the GaAsP buffer layer. This design for strain control was key in achieving high polarization (90%) in the transmission-type photocathode. (C) 2008 The Japan Society of Applied Physics.
引用
收藏
页码:0450021 / 0450023
页数:3
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