Properties of ZnO/CdS/CuInSe2 solar cells with improved performance

被引：114
|
作者：
AbuShama, JAM [1 ]
Johnston, S [1 ]
Moriarty, T [1 ]
Teeter, G [1 ]
Ramanathan, K [1 ]
Noufi, R [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
PROGRESS IN PHOTOVOLTAICS | 2004年 / 12卷 / 01期
关键词：
copper indium. diselenide; CuInSe2; admittance spectroscopy; grazing-angle incidence; three-stage process; thin-film solar cells; photovoltaics;
D O I：
10.1002/pip.537
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We report the growth and characterization of low-bandgap record-efficiency ZnO/CdS/CuInSe2 thin-film solar cells. The total area conversion efficiency for this cell is 14-5%. This result has been measured and confirmed at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/M-2 25degreesC, AM1.5 Global). The improved performance of the CuInSe2 solar cell is primarily due to a high current density. Material and device characterization data are presented. Published in 2004 by John Wiley Sons, Ltd.
引用
收藏
页码：39 / 45
页数：7
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