Polysilicon-oxide-nitride-oxide-silicon-type flash memory using an Y2O3 film as a charge trapping layer

被引：3

作者：

Pan, Tung-Ming ^{[1
]}

Yeh, Wen-Wei ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 07期

关键词：

D O I：

10.1149/1.2919136

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A polysilicon-oxide-nitride-oxide-silicon-type flash memory using a high-k yttrium oxide (Y(2)O(3)) film as the trapping storage layer is developed. This high-k Y(2)O(3) charge trapping layer memory exhibited large threshold voltage shifting (memory window of 3 V), excellent data retention (charge loss of 5 and 10% measured time up to 10(4) s and recorded at room temperature and 125 degrees C, respectively), and superior endurance characteristics (program/erase cycles up to 10(5)) because of the higher probability for trapping the charge carrier. This film appears to be a very promising charge trapping layer for high-density, two-bit nonvolatile flash memory application. (C) 2008 The Electrochemical Society.

引用

页码：G37 / G39

页数：3

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