Theoretical study of optical properties of non-polar BAlGaN/AlN quantum wells lattice-matched to A1N

被引:2
作者
Park, Seoung-Hwan [1 ]
Ahn, Doyeol [2 ]
机构
[1] Daegu Catholic Univ, Dept Elect Engn, Hayang 38430, Kyeongbuk, South Korea
[2] Univ Seoul, Dept Elect & Comp Engn, 90 Jeonnong, Seoul 02504, South Korea
基金
新加坡国家研究基金会;
关键词
SUBSTRATE; PLANE; MOVPE;
D O I
10.1016/j.ssc.2019.01.006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Light emission characteristics of non-polar ultraviolet (UV) BxAlyGa1-x-yN/AlN quantum well (QW) structures lattice-matched to AlN substrate were theoretically investigated using the multiband effective-mass theory. The peak intensity of the non-polar BAlGaN/AlN QW structure lattice-matched to AlN is found to be much larger than that of the c-plane BAlGaN/BAlGaN QW structure lattice-matched to AlN. Also, the lattice-matched BAlGaN/AlN QW structure shows a large polarization ratio and its value changes from 0.7 to 0.9 in an investigated range of carrier density. We expect that non-polar BAlGaN/BAlGaN QW structures lattice-matched to AlN could be used as a UV light source with a higher crystal quality.
引用
收藏
页码:67 / 69
页数:3
相关论文
共 17 条
[1]   Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells [J].
Al Tahtamouni, T. M. ;
Lin, J. Y. ;
Jiang, H. X. .
APPLIED PHYSICS LETTERS, 2012, 101 (04)
[2]  
Chuang S. L., 1995, PHYS OPTOELECTRONIC
[3]   Band alignments and polarization properties of BN polymorphs [J].
Dreyer, Cyrus ;
Lyons, John L. ;
Janotti, Anderson ;
Van de Walle, Chris G. .
APPLIED PHYSICS EXPRESS, 2014, 7 (03)
[4]   Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes [J].
Hou, Mengjun ;
Qin, Zhixin ;
He, Chenguang ;
Cai, Jun'an ;
Wang, Xinqiang ;
Shen, Bo .
OPTICS EXPRESS, 2014, 22 (16) :19589-19594
[5]   MOVPE grown periodic AlN/BAIN heterostructure with high boron content [J].
Li, X. ;
Sundaram, S. ;
El Gmili, Y. ;
Genty, F. ;
Bouchoule, S. ;
Patriache, G. ;
Disseix, P. ;
Reveret, F. ;
Leymarie, J. ;
Salvestrini, J. -P. ;
Dupuis, R. D. ;
Voss, P. L. ;
Ougazzaden, A. .
JOURNAL OF CRYSTAL GROWTH, 2015, 414 :119-122
[6]   Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells [J].
Northrup, J. E. ;
Chua, C. L. ;
Yang, Z. ;
Wunderer, T. ;
Kneissl, M. ;
Johnson, N. M. ;
Kolbe, T. .
APPLIED PHYSICS LETTERS, 2012, 100 (02)
[7]   Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes [J].
Okamoto, Kuniyoshi ;
Ohta, Hiroaki ;
Chichibu, Shigefusa F. ;
Ichihara, Jun ;
Takasu, Hidemi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (8-11) :L187-L189
[8]   Electronic and optical properties of a- and m-plane wurtzite InGaN-GaN quantum wells [J].
Park, Seoung-Hwan ;
Ahn, Doyeol ;
Chuang, Shun-Lien .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) :1175-1182
[9]   Theoretical studies on ultraviolet nearly lattice-matched BAlGaN/BAlGaN quantum well structures with quaternary BAlGaN barriers [J].
Park, Seoung-Hwan ;
Ahn, Doyeol .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (07)
[10]   Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures [J].
Park, Seoung-Hwan ;
Ahn, Doyeol .
APPLIED PHYSICS EXPRESS, 2016, 9 (02)