Negative electron affinity surfaces of aluminum nitride and diamond

被引：85

作者：

Nemanich, RJ ^{[1
]}

Baumann, PK ^{[1
]}

Benjamin, MC ^{[1
]}

King, SW ^{[1
]}

vanderWeide, J ^{[1
]}

Davis, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

关键词：

electron affinity; nitrides; electron emission; surfaces;

D O I：

10.1016/0925-9635(95)00485-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron affinity of diamond and AlGaN surfaces are studied by UV photoemission spectroscopy. It is shown that H terminated diamond surfaces exhibit a negative electron affinity while oxide terminated surfaces exhibit a positive electron affinity. In addition, thin metal layers can also induce a NEA on both (100) and (111) surfaces of diamond. Photoemission results of AlGaN alloy films grown on 6H-SiC indicate a negative electron affinity for as-prepared and air exposed surfaces with high Al concentrations.

引用

页码：790 / 796

页数：7

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