The dimers stay intact: a quantitative photoelectron study of the adsorption system Si{100}(2x1)-C2H4

被引：60
作者：
Baumgaertel, P. [1 ]
Lindsay, R. [1 ]
Schaff, O. [1 ]
Giessel, T. [1 ]
Terborg, R. [1 ]
Hoeft, J. T. [1 ]
Polcik, M. [1 ,5 ]
Bradshaw, A. M. [1 ]
Carbone, M. [2 ]
Piancastelli, M. N. [2 ]
Zanoni, R. [3 ]
Toomes, R. L. [4 ]
Woodruff, D. P. [4 ]
机构：
[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[2] Univ Roma Tor Vergata, Dept Chem Sci & Technol, I-00133 Rome, Italy
[3] Univ Roma La Sapienza, Dept Chem, I-00185 Rome, Italy
[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[5] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic
来源：
NEW JOURNAL OF PHYSICS | 1999年 / 1卷
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1088/1367-2630/1/1/320
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Using the technique of photoelectron diffraction in the scanned energy mode we show that the Si dimer separation on the Si{100} surface following the adsorption of ethene (ethylene) is 2.36(+/- 0.21) angstrom. This value is only very slightly larger than on the clean surface and shows that the dimer remains intact, thus providing a clear quantitative experimental resolution of a long controversy in the literature. The C-C and C-Si separations are 1.62 +/- 0.08 angstrom and 1.90 +/- 0.01 angstrom, respectively, the former indicating a bond order of less than one.
引用
收藏
页码：20.1 / 20.15
页数：15
相关论文
共 52 条
  • [1] THE LOCAL GEOMETRY OF REACTANT AND PRODUCT IN A SURFACE-REACTION - THE DEHYDROGENATION OF ADSORBED ETHYLENE ON NI(III)
    BAO, S
    HOFMANN, P
    SCHINDLER, KM
    FRITZSCHE, V
    BRADSHAW, AM
    WOODRUFF, DP
    CASADO, C
    ASENSIO, MC
    [J]. SURFACE SCIENCE, 1995, 323 (1-2) : 19 - 29
  • [2] Structure determination of the (√3 x √3) R30° boron phase on the Si(111) surface using photoelectron diffraction
    Baumgärtel, P
    Paggel, JJ
    Hasselblatt, M
    Horn, K
    Fernandez, V
    Schaff, O
    Weaver, JH
    Bradshaw, AM
    Woodruff, DP
    Rotenberg, E
    Denlinger, J
    [J]. PHYSICAL REVIEW B, 1999, 59 (20): : 13014 - 13019
  • [3] Density functional investigation of the geometric and electronic structure of ethylene adsorbed on Si(001)
    Birkenheuer, U
    Gutdeutsch, U
    Rösch, N
    Fink, A
    Gokhale, S
    Menzel, D
    Trischberger, P
    Widdra, W
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (23) : 9868 - 9876
  • [4] Structure determination of ammonia on Cu(110) - a low-symmetry adsorption site
    Booth, NA
    Davis, R
    Toomes, R
    Woodruff, DP
    Hirschmugl, C
    Schindler, KM
    Schaff, O
    Fernandez, V
    Theobald, A
    Hofmann, P
    Lindsay, R
    Giessel, T
    Baumgartel, P
    Bradshaw, AM
    [J]. SURFACE SCIENCE, 1997, 387 (1-3) : 152 - 159
  • [5] Briggs GAD, 1999, SURF SCI REP, V33, P3
  • [6] ETHYLENE ADSORPTION AND DECOMPOSITION ON SI(100) 2 X-1 - A SEMIEMPIRICAL QUANTUM-CHEMICAL STUDY
    CAO, PL
    ZHOU, RH
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (18) : 2887 - 2896
  • [7] MOLECULAR-DYNAMICS WITH COMBINED QUANTUM AND EMPIRICAL POTENTIALS - C2H2 ADSORPTION ON SI(100)
    CARMER, CS
    WEINER, B
    FRENKLACH, M
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (02) : 1356 - 1372
  • [8] Casaletto MP, IN PRESS
  • [9] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES
    CHADI, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47
  • [10] DIRECT DETERMINATION OF ABSOLUTE MONOLAYER COVERAGES OF CHEMISORBED C2H2 AND C2H4 ON SI(100)
    CHENG, CC
    WALLACE, RM
    TAYLOR, PA
    CHOYKE, WJ
    YATES, JT
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3693 - 3699
123456