Theoretical investigation on the electronic structure, elastic properties, and intrinsic hardness of Si2N2O

被引:16
作者
Ding Ying-Chun [1 ]
Chen Min [1 ]
Gao Xiu-Ying [1 ]
Jiang Meng-Heng [1 ]
机构
[1] Chengdu Univ Informat Technol, Coll Optoelect Technol, Chengdu 610225, Peoples R China
关键词
elastic property; Vickers hardness; electronic structure; SILICON OXYNITRIDE; MECHANICAL-PROPERTIES; NITRIDE; 1ST-PRINCIPLES; STABILITY; DYNAMICS; PHASE;
D O I
10.1088/1674-1056/21/6/067101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
According to the density functional theory we systematically study the electronic structure, the mechanical properties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young's modulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of beta-Si3N4 and gamma-Si3N4.
引用
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页数:10
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