Electromagnetic energy absorption potential and microwave heating capacity of SiC thin films in the 1-16 GHz frequency range

被引：27

作者：

Aissa, B. ^{[1
,4
]}

Tabet, N. ^{[2
]}

Nedil, M. ^{[3
]}

Therriault, D. ^{[4
]}

Rosei, F. ^{[5
]}

Nechache, R. ^{[5
,6
,7
]}

机构：

[1] MPB Technol Inc, Dept Smart Mat & Sensors Space Missions, Montreal, PQ H9R 1E9, Canada

[2] Ctr Excellence Nanotechnol CENT, Dept Phys, Kfupm, Saudi Arabia

[3] UQAT, Lab Rech Telebec Commun Souterraines, Val Dor, Qld J9P 1S2, Canada

[4] Ecole Polytech, Dept Mech Engn, Ctr Appl Res Polymers CREPEC, Montreal, PQ H3C 3A7, Canada

[5] INRS Energie, Ctr Energie Mat & Telecommun, Varennes, PQ J3X 1S2, Canada

[6] Univ Roma Tor Vergata, NAST Ctr, I-00133 Rome, Italy

[7] Univ Roma Tor Vergata, Dept Chem Sci & Technol, I-00133 Rome, Italy

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 14期

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会;

关键词：

PECVD; Silicon carbide materials; EM absorption; Microwave heating; AMORPHOUS-SILICON-CARBIDE; CHEMICAL-VAPOR-DEPOSITION; RADAR ABSORBING MATERIALS; X-BAND; CARBON-BLACK; ELECTRICAL-CONDUCTIVITY; COMPOSITES; PERMEABILITY; PERFORMANCE; STRESS;

D O I：

10.1016/j.apsusc.2012.02.047

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the electromagnetic (EM) absorption potential and microwave heating capacity of amorphous hydrogenated silicon carbide thin films (a-SiC:H) in the 1-16 GHz frequency domain. a-SiC: H thin films with typical thickness of 1 mu m were deposited by plasma enhanced chemical vapor deposition on [1 0 0] undoped silicon substrates, and exhibit a deep EM absorption - up to 96% of the total EM energy irradiation - which is systematically converted into heat. Two-wavelength pyrometer tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：5482 / 5485

页数：4

共 33 条

[31] Fabrication of amorphous silicon carbide films using VHF-PECVD for triple junction thin-film solar cell applications [J].

Yunaz, Ihsanul Afdi ;

Hashizume, Kenji ;

Miyajima, Shinsuke ;

Yamada, Akira ;

Konagai, Makoto .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (6-7) :1056-1061

[32] Advanced chemical vapor deposition silicon carbide barrier technology for ultralow permeability applications [J].

Zambov, Ludmil ;

Weidner, Ken ;

Shamamian, Vasgen ;

Camilletti, Robert ;

Pernisz, Udo ;

Loboda, Mark ;

Cerny, Glenn ;

Gidley, David ;

Peng, Hua-Gen ;

Vallery, Richard .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (05) :1706-1713

[33] Study on a PECVD SiC-coated pressure sensor [J].

Zhang, Haixia ;

Guo, Hui ;

Wang, Yu ;

Zhang, Guobing ;

Li, Zhihong .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2007, 17 (03) :426-431

← 1 2 3 4 →