SiO2 beads with quantum dots: Preparation and stability investigation for bioapplications

被引:5
作者
Yang, Ping [1 ]
Murase, Norio [3 ]
Yu, Jinghua [2 ]
机构
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[2] Univ Jinan, Sch Chem & Chem Engn, Jinan 250022, Peoples R China
[3] Natl Inst Adv Ind Sci & Technol, Hlth Res Inst, Ikeda, Osaka 5638577, Japan
基金
美国国家科学基金会;
关键词
QDs; Silica; Beads; Degradation; Buffer solution; CDTE NANOCRYSTALS; SILICA; PHOTOLUMINESCENCE; CDSE; NANOPARTICLES; PHOTODEGRADATION; EFFICIENCY; ENSEMBLE; THIOLS; YIELD;
D O I
10.1016/j.colsurfa.2011.06.001
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SiO2 beads with quantum dots (QDs) including hydrophilic CdTe or hydrophobic CdSe/ZnS were prepared through sol-gel procedures. These beads contained single or multiple QDs by controlling the ligand exchange and the QD assembly during incorporation. Namely, SiO2 beads with CdTe QDs retained high photoluminescence (PL) efficiencies up to 40% when thioglycolic acid was partially replaced by 3-mercaptopropyltrimethoxysilane. Multiple CdSe/ZnS QDs were assembled into a SiO2 bead (similar to 7 QDs in each bead) through surface silanization using tetraethyl orthosilicate instead of organic ammine. The stability of CdTe QDs and luminescent SiO2 beads was investigated by measuring the degradation of PL intensity against the concentration of phosphate-buffered saline (PBS) buffer solutions. The Stern-Volmer quenching constant K-sv of QDs depended strongly on the properties of the QDs and the thickness and porous type of SiO2 shell. Red- and green-emitting CdTe QDs exhibited K-sv of 2.02 x 10(-2) and 8.93 x 10(-2) mM(-1), respectively. The II-type pores (cylindrical pores) in the SiO2 shell resulted in quick degradation while the IV-type pores (ink-bottle-shaped pores) led the QDs a high stability. Because both two kinds of QDs in SiO2 beads revealed high PL efficiency and stability in buffer solution, these luminescent beads should be utilizable for bioapplications. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:159 / 165
页数:7
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