Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology

被引：76
|
作者：
Chen, KN [1 ]
Fan, A [1 ]
Tan, CS [1 ]
Reif, R [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 01期
关键词：
3-D integration technology; bonded interconnects; contact resistance; copper wafer bonding;
D O I：
10.1109/LED.2003.821591
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the Possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10(-8) Omega-cm(2) are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.
引用
收藏
页码：10 / 12
页数：3
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