Twist angle dependent electronic properties in 2D graphene/MoS2 vdW heterostructures

被引:6
|
作者
Wang, Jicui [1 ]
Ge, Mei [1 ]
Ma, Rongrong [1 ]
Sun, Yun [1 ]
Cheng, Liyuan [1 ]
Wang, Rui [1 ]
Guo, Miaomiao [1 ]
Zhang, Junfeng [1 ]
机构
[1] Shanxi Normal Univ, Sch Phys & Informat Engn, Taiyuan 030036, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
CORRELATED STATES; MAGIC-ANGLE; BILAYER; MOS2;
D O I
10.1063/5.0077669
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional (2D) heterostructures constructed by different 2D materials offer new opportunities for novel nano-devices. Twist angle (theta) between two individual layers in 2D van der Waals (vdW) heterostructures shows great importance in modulating their electronic properties. Here, we performed first-principles calculations to study the thermodynamic stability and electronic properties of graphene/MoS2 (Gr/MoS2) vdW heterostructures. We have built dozens of possible Gr/MoS2 vdW heterostructures under the limitation of the maximum mismatch (delta <= 2.5%) and supercell lattice (>= 20 angstrom). We found the cohesive energy (E-coh) is dependent on the interlayer distance and theta. In addition, a huge difference can be found in both the band offset and interlayer carrier's lifetime of Gr/MoS2 with different theta. These results provide valuable insights into the identification of these twist structures in experiments and the designation of Gr/MoS2 related optoelectronic devices.
引用
收藏
页数:9
相关论文
共 50 条
  • [31] Adhesion Energies of 2D Graphene and MoS2 to Silicon and Metal Substrates
    Torres, Jorge
    Zhu, Yisi
    Liu, Pei
    Lim, Seong Chu
    Yun, Minhee
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (01):
  • [32] Rapid Layer-Number Identification of MoS2 Nanosheet in MoS2/ MoO2 Conformal Heterostructures by Color: Implications for the Fabrication of 2D/3D Heterostructures
    Wu, Hongrong
    Li, Na
    Tong, Pinsen
    Yu, Peishi
    Zhao, Junhua
    ACS APPLIED NANO MATERIALS, 2022, 5 (08) : 11280 - 11288
  • [33] Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation
    Yuan, Jiahao
    Liao, Mengzhou
    Huang, Zhiheng
    Tian, Jinpeng
    Chu, Yanbang
    Du, Luojun
    Yang, Wei
    Shi, Dongxia
    Yang, Rong
    Zhang, Guangyu
    CHINESE PHYSICS B, 2022, 31 (08)
  • [34] Research on electronic and optical properties of pristine and Ag/Au/ Cu-doped graphene/MoS2 heterostructures
    Tian, Lei
    He, Chengyu
    Ling, Fei
    Chen, Zhong
    Li, Xianrui
    DIAMOND AND RELATED MATERIALS, 2024, 142
  • [35] Modulation the electronic property of 2D monolayer MoS2 by amino acid
    Zhang, Peng
    Wang, Zegao
    Liu, Lei
    Klausen, Lasse Hyldgaard
    Wang, Yin
    Mi, Jianli
    Dong, Mingdong
    APPLIED MATERIALS TODAY, 2019, 14 : 151 - 158
  • [36] Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications
    Sharma, Akhil
    Mahlouji, Reyhaneh
    Wu, Longfei
    Verheijen, Marcel A.
    Vandalon, Vincent
    Balasubraman, Shashank
    Hofmann, Jan P.
    Kessels, W. M. M.
    Bol, Ageeth A.
    NANOTECHNOLOGY, 2020, 31 (25)
  • [37] Covalent Patterning of 2D MoS2
    Chen, Xin
    Kohring, Malte
    Assebban, M'hamed
    Tywoniuk, Bartlomiej
    Bartlam, Cian
    Moses Badlyan, Narine
    Maultzsch, Janina
    Duesberg, Georg S.
    Weber, Heiko B.
    Knirsch, Kathrin C.
    Hirsch, Andreas
    CHEMISTRY-A EUROPEAN JOURNAL, 2021, 27 (52) : 13117 - 13122
  • [38] Twist Angle-Dependent Interlayer Exciton in MoS2 Bilayers Revealed by Room-Temperature Reflectance
    Xiong, Lei
    Tang, Tianhong
    Fan, Xiaoyue
    Liu, Haiyang
    Zhu, Peng
    Zhang, Xiaolan
    Qiao, Wei
    Wang, Qinsheng
    Wang, Zhiwei
    Niu, Binghui
    Wang, Gang
    CRYSTALS, 2022, 12 (06)
  • [39] Electronic Structure of the Low-Lying States of the Triatomic MoS2 Molecule: The Building Block of 2D MoS2
    Mermigki, Markella A.
    Karapetsas, Ioannis
    Tzeli, Demeter
    CHEMPHYSCHEM, 2023, 24 (21)
  • [40] Electronic and elastic properties of MoS2
    Li Wei
    Chen Jun-fang
    He Qinyu
    Wang Teng
    PHYSICA B-CONDENSED MATTER, 2010, 405 (10) : 2498 - 2502