Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

被引:536
作者
Campbell, IH [1 ]
Rubin, S [1 ]
Zawodzinski, TA [1 ]
Kress, JD [1 ]
Martin, RL [1 ]
Smith, DL [1 ]
Barashkov, NN [1 ]
Ferraris, JP [1 ]
机构
[1] UNIV TEXAS, RICHARDSON, TX 75083 USA
关键词
D O I
10.1103/PhysRevB.54.R14321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices.
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页码:14321 / 14324
页数:4
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