Argon ion damage in self-assembled quantum dots structures

被引：35

作者：

Schoenfeld, WV ^{[1
]}

Chen, CH ^{[1
]}

Petroff, PM ^{[1
]}

Hu, EL ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect. (C) 1998 American Institute of Physics. [S0003-6951(98)03346-4].

引用

页码：2935 / 2937

页数：3

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