Mixed phase delafossite structured p type CuFeO2/CuO thin film on FTO coated glass and its Schottky diode characteristics

被引：33

作者：

Bera, A. ^{[1
]}

Deb, K. ^{[1
]}

Chattopadhyay, K. K. ^{[2
]}

Thapa, R. ^{[3
]}

Saha, B. ^{[1
]}

机构：

[1] Natl Inst Technol Agartala, Dept Phys, Jirania 799046, West Tripura, India

[2] Jadavpur Univ, Dept Phys, Kolkata 700032, India

[3] SRM Univ, SRM Res Inst, Kattankulathur 603203, Tamil Nadu, India

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 162卷

关键词：

Delafossite structure; Thin film; Electrical properties; Schottky diode; OPTICAL-PROPERTIES; ZNO; OXIDE; TEMPERATURE; FABRICATION; DEPOSITION; FACILE; CUALO2;

D O I：

10.1016/j.mee.2016.04.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Delafossite structures are of significant importance in the recent context of development of structured and engineered materials because of their natural super lattice structure. The delafossite structured CuFeO2 mixed with crystalline CuO phase has been prepared by the simple chemical method of sol-gel technique on fluorine doped tin oxide (PTO) coated glass substrate. The mixed phase of delafossite structured CuFeO2 with crystalline CuO was appeared on annealing the film at 723 K. The prepared film was characterized with X-ray diffraction measurements, atomic force microscopy, UV-Vis-NIR spectrophotometry and electrical I-V measurements. The optical energy band gap of 2.63 eV was obtained from the UV-Vis-NIR spectrophotometric measurements. On electrical characterization of the film, the (I-V) measurements show a Schottky diode like characteristics. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：23 / 26

页数：4

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