Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

被引：1

作者：

Kohda, M. ^{[1
,2
]}

Ogawa, J. ^{[1
]}

Shiogai, J. ^{[1
]}

Matsukura, F. ^{[3
]}

Ohno, Y. ^{[3
]}

Ohno, H. ^{[3
]}

Nitta, J. ^{[1
]}

机构：

[1] Tohoku Univ, Dept Mat Sci, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 10期

关键词：

(Ga; Mn)As wire; Anisotropic magneto-resistance; Magnetic anisotropy; MAGNETOTRANSPORT; SEMICONDUCTORS;

D O I：

10.1016/j.physe.2009.12.019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In-plane magnetic anisotropy of 40-mu m-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 mu m) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane < 1 0 0 > cubic and [-1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 mu m. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2685 / 2689

页数：5

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