Direct Bonding Mechanism of ALD-Al2O3 Thin Films

被引：15

作者：

Beche, E. ^{[1
,2
]}

Fournel, F. ^{[1
,2
]}

Larrey, V. ^{[1
,2
]}

Rieutord, F. ^{[1
,3
]}

Morales, C. ^{[1
,2
]}

Charvet, A-M ^{[1
,2
]}

Madeira, F. ^{[1
,2
]}

Audoit, G. ^{[1
,2
]}

Fabbri, J. -M. ^{[1
,2
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA Grenoble, LETI, F-38054 Grenoble 9, France

[3] CEA Grenoble, INAC, F-38054 Grenoble 9, France

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 05期

关键词：

SOI MOSFETS; OXIDE; SILICON; SI(001); LAYER;

D O I：

10.1149/2.0241505jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct bonding mechanism of amorphous ALD alumina has been investigated from room temperature up to 1200 degrees C. By considering the evolution with temperature of free alumina surfaces and bonded configuration we highlight strong interaction between oxidant species and defect generation through interfacial oxidation. In the first case, the combination of internal stress and adhesion loss by dry O-2 oxidation results in blister formations, whereas in the case of bonding structures, wet oxidation with H-2 production at Silicon-Alumina interfaces explains void formation. Based on these established mechanisms we provide insights on alumina layer integration within a large temperature range. (C) The Author(s) 2015. Published by ECS. All rights reserved.

引用

页码：P171 / P175

页数：5

共 27 条

[1]

Beche E., 2014, MICROSYST TECHNOL

[2] Integration of buried insulators with high thermal conductivity in SOI MOSFETs:: Thermal properties and short channel effects [J].

Bresson, N ;

Cristoloveanu, S ;

Mazuré, C ;

Letertre, F ;

Iwai, H .

SOLID-STATE ELECTRONICS, 2005, 49 (09) :1522-1528

[3] Low Temperature PE-TEOS Oxide Bonding Assisted by a Thin Layer of High-κ Dielectric [J].

Chong, G. Y. ;

Tan, C. S. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (11) :H408-H411

[4] Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories [J].

Colonna, J. P. ;

Bocquet, M. ;

Molas, G. ;

Rochat, N. ;

Blaise, P. ;

Grampeix, H. ;

Licitra, C. ;

Lafond, D. ;

Masoero, L. ;

Vidal, V. ;

Barnes, J. P. ;

Veillerot, M. ;

Yckache, K. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01)

[5] Robustness of ultrathin aluminum oxide dielectrics on Si(001) [J].

Copel, M ;

Cartier, E ;

Gusev, EP ;

Guha, S ;

Bojarczuk, N ;

Poppeller, M .

APPLIED PHYSICS LETTERS, 2001, 78 (18) :2670-2672

[6] New physics mechanisms enabled by advanced SOICMOS engineering [J].

Cristoloveanu, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 114 :9-14

[7]

De Beaumont C., 2005, SILICON ON INSULATOR, P231

[8]

Ericsson P, 1997, ECS PV, V97, P576

[9]

Ikku Y., 2011, 2011 INT C I P R M B

[10] Investigation of the effect of high-temperature annealing on stability of ultrathin Al2O3 films on Si(001) [J].

Kundu, M ;

Miyata, N ;

Ichikawa, M .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) :1914-1921

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