Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation.

被引：9

作者：

Christol, P. ^{[1
]}

Cervera, C. ^{[1
]}

Chaghi, R. ^{[1
]}

Ait-kaci, H. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Konczewicz, L. ^{[2
]}

Contreras, S. ^{[2
]}

Jaworowicz, K. ^{[3
]}

Ribet-Mohamed, I. ^{[3
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5214, Inst Elect Sud, Pl Eugene Bataillon, F-34095 Montpellier 5, France

[2] Univ Montpellier 2, Grp Etude des Semicond, UMR CNRS 5650, F-34095 Montpellier, France

[3] Off Natl Etud & Rech Aerosp, F-91761 Palaiseau, France

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES VII | 2010年 / 7608卷

关键词：

InAs/GaSb Superlattice; Infrared Photodiode; transport measurements; dark current measurements; PHOTOVOLTAIC DETECTOR;

D O I：

10.1117/12.840853

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8 InAs monolayers (MLs) and 8 GaSb MLs, for a total thickness of 3 mu m. This structure exhibited a cutoff wavelength in the midwave infrared (MWIR) domain, near 4.7 mu m at 80K. Electrical transport measurements, based on resistivity and Hall Effect measurements, were performed on SL structure after removing the conducting GaSb substrate with an appropriate technological process. Carrier concentrations and mobilities carried out as a function of temperature (77-300K) for magnetic fields in the 0-1 Tesla range are analyzed. A change in type of conductivity is observed. The nid SL layers is p-type at liquid Nitrogen temperature while is n-type at room temperature. These results are completed with diode characterizations based on current-voltage (I-V) and capacitance-voltage (C-V) measurements performed on p-nid-n devices with identical InAs/GaSb SL active zone.

引用

页数：11

共 24 条

[1]

Bürkle L, 2000, APPL PHYS LETT, V77, P1659, DOI 10.1063/1.1310167

[2] Characterization of midwave infrared InAs/GaSb superlattice photodiode [J].