The Coulomb interaction in van der Waals heterostructures

被引:31
作者
Huang, Le [1 ]
Zhong, MianZeng [2 ]
Deng, HuiXiong [2 ]
Li, Bo [4 ]
Wei, ZhongMing [2 ]
Li, JingBo [1 ,2 ]
Wei, SuHuai [3 ]
机构
[1] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China
[2] Univ Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[3] Beijing Computat Sci Res Ctr, Beijing 100094, Peoples R China
[4] Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
van der Waals heterostructures; gaint Stark effect; Coulomb interaction; charge transfer; TOTAL-ENERGY CALCULATIONS; BLACK PHOSPHORUS; BANDGAP;
D O I
10.1007/s11433-018-9294-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The giant Stark effect (GSE) in a set of van der Waals (vdW) heterostructures is studied using first-principles methods. A straightforward model based on quasi-Fermi levels is proposed to describe the influence of an external perpendicular electric field on both band gap and band edges. Although a general linear GSE is observed, which is induced by the almost linear variation of the band edges of each layer in the heterostructures, when vdW heterostructures is subjected to small electric fields the variation becomes nonlinear. This can be attributed to the band offsets-induced interlayer charge transfer and resulted intraand inter-layer Coulomb interactions. Our work, thus offers new insight into the mechanism of the nonlinear GSE in vdW heterostructures, which is important for the applications of vdW heterostructures on nanoelectronic devices.
引用
收藏
页数:6
相关论文
共 34 条
  • [1] Giant Stark effect in the emission of single semiconductor quantum dots
    Bennett, Anthony J.
    Patel, Raj B.
    Skiba-Szymanska, Joanna
    Nicoll, Christine A.
    Farrer, Ian
    Ritchie, David A.
    Shields, Andrew J.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (03)
  • [2] PROJECTOR AUGMENTED-WAVE METHOD
    BLOCHL, PE
    [J]. PHYSICAL REVIEW B, 1994, 50 (24): : 17953 - 17979
  • [3] Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
    Coleman, Jonathan N.
    Lotya, Mustafa
    O'Neill, Arlene
    Bergin, Shane D.
    King, Paul J.
    Khan, Umar
    Young, Karen
    Gaucher, Alexandre
    De, Sukanta
    Smith, Ronan J.
    Shvets, Igor V.
    Arora, Sunil K.
    Stanton, George
    Kim, Hye-Young
    Lee, Kangho
    Kim, Gyu Tae
    Duesberg, Georg S.
    Hallam, Toby
    Boland, John J.
    Wang, Jing Jing
    Donegan, John F.
    Grunlan, Jaime C.
    Moriarty, Gregory
    Shmeliov, Aleksey
    Nicholls, Rebecca J.
    Perkins, James M.
    Grieveson, Eleanor M.
    Theuwissen, Koenraad
    McComb, David W.
    Nellist, Peter D.
    Nicolosi, Valeria
    [J]. SCIENCE, 2011, 331 (6017) : 568 - 571
  • [4] Chemical vapor deposition growth of two-dimensional heterojunctions
    Cui, Yu
    Li, Bo
    Li, JingBo
    Wei, ZhongMing
    [J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2018, 61 (01)
  • [5] Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode
    Deng, Yexin
    Luo, Zhe
    Conrad, Nathan J.
    Liu, Han
    Gong, Yongji
    Najmaei, Sina
    Ajayan, Pulickel M.
    Lou, Jun
    Xu, Xianfan
    Ye, Peide D.
    [J]. ACS NANO, 2014, 8 (08) : 8292 - 8299
  • [6] Electronic structures of silicene/GaS heterosheets
    Ding, Yi
    Wang, Yanli
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (04)
  • [7] Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous
    Dolui, Kapildeb
    Quek, Su Ying
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [8] Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
    Furchi, Marco M.
    Pospischil, Andreas
    Libisch, Florian
    Burgdoerfer, Joachim
    Mueller, Thomas
    [J]. NANO LETTERS, 2014, 14 (08) : 4785 - 4791
  • [9] Semiempirical GGA-type density functional constructed with a long-range dispersion correction
    Grimme, Stefan
    [J]. JOURNAL OF COMPUTATIONAL CHEMISTRY, 2006, 27 (15) : 1787 - 1799
  • [10] Hong XP, 2014, NAT NANOTECHNOL, V9, P682, DOI [10.1038/NNANO.2014.167, 10.1038/nnano.2014.167]