PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications

被引：15

作者：

Kim, Dongsu ^{[1
]}

Heo, Su Jin ^{[1
]}

Pyo, Goeun ^{[1
]}

Choi, Hong Soo ^{[2
]}

Kwon, Hyuk-Jun ^{[1
,3
]}

Jang, Jae Eun ^{[1
]}

机构：

[1] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Informat & Commun Engn, Daegu 42988, South Korea

[2] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Robot Engn, Daegu 42988, South Korea

[3] Daegu Gyeongbuk Inst Sci & Technol DGIST, Convergence Res Adv Ctr Olfact, Daegu 42988, South Korea

来源：

IEEE ACCESS | 2021年 / 9卷

基金：

新加坡国家研究基金会;

关键词：

Annealing; Synapses; Thin film transistors; Transistors; Temperature measurement; Performance evaluation; Neuromorphics; Ferroelectric; synapse; neuromorphic; multi-level; transistor; MEMORY; FILMS;

D O I：

10.1109/ACCESS.2021.3119607

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

To fundamentally solve the bottleneck of Von Neumann's computing architecture, a neuromorphic thin-film transistor (NTFT) employing Pb(Zr, Ti)O-3 (PZT) was investigated. The indium gallium zinc oxide (IGZO) channel back gate TFT structure was chosen to solve the diffusion of atoms that form a channel layer during the annealing process for crystallization of PZT. A post-deposition process with IGZO after annealing PZT and using an oxide-based material as a channel structure can minimize the diffusion phenomenon of junction materials and oxygen together, which leads to a high and reliable performance of the NTFT. The basic operations of synapses short-term memory (STM) and long-term memory (LTM) were also analyzed to confirm the application of a neuromorphic device. The high dielectric constant and polarization properties of Pb(Zr, Ti)O-3 (PZT) allow the power consumption of spike signals used in spike dependent plasticity change to be reduced to 10 pJ. Moreover, a wide dynamic range of G(max)/G(min) congruent to 1000 was obtained, and the channel conductance was maintained over 40000 seconds. The optimized pulse achieved multi-level states (>32), which made the learning process efficient. This study verified that the PZT-TFT structure has a high potential and merits for neuromorphic devices.

引用

页码：140975 / 140982

页数：8

共 30 条

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