Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates

The development of a low temperature selective epitaxial process for the growth of 3C-SiC on patterned Si substrates is reported. Due to the damage caused to the oxide mask at the conventional growth temperatures of similar to 1350 degreesC, temperatures lower than 1250 degreesC are needed. In order to lower the temperature for epitaxial growth, trimethylaluminium (TMA) was used and epitaxial films successfully grown at 1250 degreesC. However, this approach resulted in the formation of an unidentified phase at the 3C-SiC/Si interface as well as gas phase nucleation. Using HMDS as the single-source precursor, films were grown at 1150 degreesC using a low growth rate. Finally, experiments were performed using HCDS and propane at 1150 degreesC. Long time growth (up to 3 hours) reveals good films with no damage to the oxide. Coalescence has been demonstrated.