Modelling lifetime degradation in boron-doped Czochralski silicon

被引：8

作者：

Voronkov, Vladimir V. ^{[1
]}

Falster, Robert ^{[1
]}

Batunina, Anna V. ^{[2
]}

机构：

[1] MEMC Elect Mat, I-39012 Merano, Italy

[2] Inst Rare Met, Moscow 109017, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 03期

关键词：

boron; lifetime degradation; oxygen; silicon;

D O I：

10.1002/pssa.201000191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron lifetime in boron-and oxygen-containing silicon is known to decrease under illumination. The emerging recombination centre was previously thought to be a complex B(s)O(2), of a substitutional boron atom and an oxygen dimer. However this attribution has turned out to be inconsistent with recently published data. A new model was proposed, based on a latent single-positive complex B(i)O(2) that involves an interstitial boron atom B(i) rather than B(s). Excess electrons lead to recharging the latent B(i)O(2) centre into the neutral state, with subsequent reconstruction into recombination-active configuration. This model was used to simulate the reported data on production of recombination centres, in a wide range of applied illumination intensity - and found to provide a good reproduction of the data. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：576 / 579

页数：4

共 50 条

[1] Lifetime degradation mechanism in boron-doped Czochralski silicon
Voronkov, V. V.
Falster, R.
Batunina, A. V.
Macdonald, D.
Bothe, K.
Schmidt, J.
EMRS-C: MATERIALS DEVICES AND ECONOMICS ISSUES FOR TOMORROW'S PHOTOVOLTAICS, 2011, 3
[2] Light-induced lifetime degradation in boron-doped Czochralski silicon: are oxygen dimers involved?
Voronkov, Vladimir V.
Falster, Robert
Bothe, Karsten
Lim, Bianca
PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013), 2013, 38 : 636 - 641
[3] Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect
Hallam, Brett
Abbott, Malcolm
Naerland, Tine
Wenham, Stuart
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (07): : 520 - 524
[4] Carrier Lifetime Degradation and Regeneration in Gallium- and Boron-Doped Monocrystalline Silicon Materials
Winter, Michael
Walter, Dominic C.
Schmidt, Jan
IEEE JOURNAL OF PHOTOVOLTAICS, 2021, 11 (04): : 866 - 872
[5] On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon
Jafari, Saman
Zhu, Yan
Rougieux, Fiacre
De Guzman, Joyce Ann T.
Markevich, Vladimir P.
Peaker, Anthony R.
Hameiri, Ziv
ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (05) : 6140 - 6146
[6] The Features of Infrared Absorption of Boron-Doped Silicon
Khirunenko, Lyudmila
Sosnin, Mikhail
Duvanskii, Andrei
Abrosimov, Nikolai
Riemann, Helge
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (23):
[7] Precipitation of boron in highly boron-doped silicon
Mizushima, I
Mitani, Y
Koike, M
Yoshiki, M
Tomita, M
Kambayashi, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1171 - 1173
[8] Hall mobility drops in disordered boron-doped Czochralski silicon compensated by thermal donors activation
Veirman, J.
Dubois, S.
Enjalbert, N.
Garandet, J. P.
Heslinga, D. R.
Lemiti, M.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 729 - 732
[9] Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation
Qian Wang
Bincheng Li
International Journal of Thermophysics, 2016, 37
[10] Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation
Wang, Qian
Li, Bincheng
INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2016, 37 (04) : 1 - 10

← 1 2 3 4 5 →