Charge-Noise Resilience of Two-Electron Quantum Dots in Si=SiGe Heterostructures

被引：4
作者：
Ercan, H. Ekmel [1 ]
Friesen, Mark [1 ]
Coppersmith, S. N. [1 ,2 ]
机构：
[1] Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA
[2] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
来源：
PHYSICAL REVIEW LETTERS | 2022年 / 128卷 / 24期
基金：
美国国家科学基金会;
关键词：
SILICON; STATES; DONOR; QUBIT;
D O I：
10.1103/PhysRevLett.128.247701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, composed of valley vs orbital excitations. Here, we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against charge noise. We further show that this protection arises naturally in dots with stronger confinement. These results reveal an inherent advantage for silicon-based multielectron qubits.
引用
收藏
页数：6
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